Simulation and Experimental Study of Plasma Effects in Planar Silicon Sensors

TL;DR

This study compares numerical simulations with experimental measurements to understand how high densities of electron-hole pairs affect current pulse shapes and charge distribution in planar silicon sensors.

Contribution

It provides a detailed validation of simulation models against experimental data for high charge density effects in silicon sensors.

Findings

Simulations accurately reproduce experimental current pulse shapes.

High electron-hole densities significantly alter charge collection dynamics.

The study enhances understanding of plasma effects in silicon sensor operation.

Abstract

In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper presents a detailed comparison of numerical simulations with time resolved current measurements on planar silicon sensors using 660~nm laser light to create different densities of electron hole pairs.