Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

TL;DR

This paper provides new parameters for charge carrier mobility and drift velocity saturation in bulk silicon with <111> and <100> orientations, based on high-field measurements across various temperatures.

Contribution

It introduces a new set of mobility parameters as functions of temperature and electric field for specific silicon crystal orientations.

Findings

Derived mobility parameters for <111> and <100> silicon orientations.

Measured drift velocities at high electric fields and various temperatures.

Identified the dependence of mobility on crystal orientation and temperature.

Abstract

The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for <111> and <100> crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p^+nn^+ diodes in the temperature range between -30{\deg}C and 50{\deg}C and electric fields of 2x10^3 V/cm to 2x10^4 V/cm.