Controllable, driven phase transitions in the Fractional quantum Hall states in bilayer graphene

TL;DR

This paper theoretically demonstrates that in biased bilayer graphene, phase transitions between fractional quantum Hall states can be controlled by tuning the bandgap, revealing unique tunable quantum phenomena not seen in traditional semiconductors.

Contribution

It introduces the concept of controllable phase transitions in fractional quantum Hall states in bilayer graphene, highlighting the dependence on inter-layer coupling strength.

Findings

Phase transitions can be induced by tuning the bandgap.

Transition characteristics differ between weak and strong inter-layer coupling.

Tunable quantum Hall phenomena are unique to bilayer graphene.

Abstract

Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the bandgap at a given electron density. The nature of such phase transitions is different for weak and strong inter-layer coupling. Although for strong coupling more levels interact there are lesser number of transitions than for the weak coupling case. The intriguing scenario of tunable phase transitions in the fractional quantum Hall states is unique to bilayer graphene and never before existed in conventional semiconductor systems.