Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings

TL;DR

This paper demonstrates how vertical electric fields can control the lateral position of excitons in semiconductor quantum rings, enabling potential applications in quantum information and optoelectronics.

Contribution

It introduces a novel method of switching exciton positions in quantum rings using vertical electric fields, supported by path integral quantum Monte Carlo simulations.

Findings

Excitons can be switched between two lateral locations within the ring.

The switching affects polarizability and dipole moments.

Biexcitons exhibit an energy shift beyond the normal Stark shift.

Abstract

We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with strongly-correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift.