Rectification in three-terminal graphene junctions

TL;DR

This paper reports on the intrinsic rectification effects in three-terminal graphene nanojunctions, demonstrating tunable rectification sign and efficiency at room temperature, influenced by gate voltage and charge carrier type, with quantum effects at low bias and temperature.

Contribution

It introduces the observation of intrinsic rectification in graphene nanojunctions and shows how it can be tuned by electrical gating and charge carrier type.

Findings

Rectification observed up to room temperature.

Rectification sign and efficiency are gate-tunable.

Quantum conductance fluctuations influence low-bias rectification.

Abstract

Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.