The effects of disorder and interactions on the Anderson transition in doped Graphene

TL;DR

This study uses numerical methods to explore how disorder and interactions influence the Anderson transition in doped graphene, revealing multiple mobility edges and explaining experimental puddle scale enlargements.

Contribution

It provides the first detailed numerical analysis of disorder effects on Anderson localization in graphene, including the impact of interactions and multiple mobility edges.

Findings

Disorder induces an Anderson metal-insulator transition in graphene.

Four mobility edges are observed under specific disorder conditions.

Interactions and disorder together explain experimental puddle size increases.

Abstract

We undertake an exact numerical study of the effects of disorder on the Anderson localization of electronic states in graphene. Analyzing the scaling behaviors of inverse participation ratio and geometrically averaged density of states, we find that Anderson metal-insulator transition can be introduced by the presence of quenched random disorder. In contrast with the conventional picture of localization, four mobility edges can be observed for the honeycomb lattice with specific disorder strength and impurity concentration. Considering the screening effects of interactions on disorder potentials, the experimental findings of the scale enlarges of puddles can be explained by reviewing the effects of both interactions and disorder.