Reversible modifications of linear dispersion - graphene between boron nitride monolayers

TL;DR

This study investigates how stacking graphene between boron nitride layers and applying electric fields can reversibly modify its electronic band structure, especially opening a significant energy gap, which is promising for electronic device applications.

Contribution

It demonstrates that the band gap of graphene can be reversibly tuned through stacking order and electric fields in a graphene/boron nitride heterostructure, using first-principles and tight-binding models.

Findings

Linear bands near Dirac points in ABC-stacked structure without external field

Electric field can open a band gap over 230 meV

Mechanism enables tunable electronic properties for graphene-based transistors

Abstract

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure in the absence of external field the bands are linear in the vicinity of the Dirac points as in the case of single-layer graphene. For certain atomic configuration, the electric field effect allows opening of a band gap of over 230 meV. We believe that this mechanism of energy gap tuning could significantly improve the characteristics of graphene-based field-effect transistors and pave the way for future electronic applications.