Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

TL;DR

This paper investigates the magneto-transport properties of a 2D electron gas in a honeycomb lattice, revealing a delocalized-localized transition and suggesting potential for simulating quantum phases with Coulomb interactions.

Contribution

It demonstrates the control of electron localization in a honeycomb lattice and highlights its potential for quantum simulation applications.

Findings

Periodic magneto-resistance oscillations observed

Delocalized-localized transition induced by gate voltage

Potential for simulating Coulomb-driven quantum phases

Abstract

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.