Zero differential resistance in two-dimensional electron systems at large filling factors
A. T. Hatke, H. -S. Chiang, M. A. Zudov, L. N. Pfeiffer, and K. W., West

TL;DR
This paper reports the discovery of a zero differential resistance state in high-mobility two-dimensional electron systems at large filling factors, extending over a broad magnetic field range and linked to Hall field-induced oscillations.
Contribution
It introduces a novel zero differential resistance state in high Landau levels, observed over a wide magnetic field range, and analyzes its dependence on current and magnetic field.
Findings
Zero differential resistance appears in high Landau levels at low temperatures.
The state exists over a broad magnetic field range below Shubnikov-de Haas onset.
Maximum current correlates with inter-Landau level scattering onset.
Abstract
We report on a state characterized by a zero differential resistance observed in very high Landau levels of a high-mobility two-dimensional electron system. Emerging from a minimum of Hall field-induced resistance oscillations at low temperatures, this state exists over a continuous range of magnetic fields extending well below the onset of the Shubnikov-de Haas effect. The minimum current required to support this state is largely independent on the magnetic field, while the maximum current increases with the magnetic field tracing the onset of inter-Landau level scattering.
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