Role of interface reaction on resistive switching of Metal/a-TiO2/Al RRAM devices

TL;DR

This study explores how different top metal electrodes influence resistive switching in Metal/a-TiO2/Al RRAM devices, highlighting the critical role of interface reactions and interfacial layer formation in device performance.

Contribution

It demonstrates that the interface layer formed by redox reactions significantly affects bipolar resistive switching, with Al showing the best performance due to its high oxygen affinity.

Findings

Al electrode yields the best memory performance

Interfacial layer formation correlates with switching behavior

Redox reactions at the interface are crucial for device operation

Abstract

For the clear understanding of the role of interface reaction between top metal electrode and titanium oxide layer, we investigated the effects of various top metals on the resistive switching in Metal/a-TiO2/Al devices. The top Al device with the highest oxygen affinity showed the best memory performance, which is attributed to the fast formation of interfacial layer (Al-Ti-O), as confirmed by high resolution transmission electron microscopy and electron dispersive spectroscopy. Hence, we concluded that the interface layer, created by the redox reaction between top metal electrode and TiO2 layer, plays a crucial role in bipolar resistive switching behaviors of metal/TiO2/Al systems.