Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors

TL;DR

This paper investigates the universal behavior of linear magnetoresistance in strongly disordered semiconductors, revealing its proportionality to carrier mobility and independence from carrier density, suggesting a universal classical explanation.

Contribution

It demonstrates that linear magnetoresistance in disordered semiconductors is universally proportional to mobility and insensitive to disorder details, providing a new understanding of classical LMR.

Findings

LMR magnitude equals carrier mobility across a wide range.

LMR is independent of carrier density.

LMR behavior is insensitive to disorder details.

Abstract

Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitude of the linear magnetoresistance (LMR) is numerically equal to the carrier mobility over a wide range and is independent of carrier density. This behavior is complementary to the Hall effect that is independent of the mobility and dependent on the carrier density. Moreover, the LMR appears to be insensitive to the details of the disorder and points to a universal explanation of classical LMR that can be applied to other material systems.