Microwave zero-resistance states in a bilayer electron system

TL;DR

This study reports the observation of microwave-induced zero-resistance states in a high-mobility bilayer electron system, showing that these states occur even with intersubband scattering and depend on frequency, power, and temperature.

Contribution

It demonstrates the occurrence of zero-resistance states in a bilayer system under microwave irradiation and correlates these states with negative resistivity conditions predicted by theory.

Findings

Zero-resistance states appear under microwave irradiation.

ZRS occur despite intersubband scattering.

Photoresistance depends on frequency, power, and temperature.

Abstract

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.