Hole spin relaxation in intrinsic and $p$-type bulk GaAs
K. Shen, M. W. Wu

TL;DR
This study uses a microscopic kinetic spin Bloch equation approach to analyze hole spin relaxation in intrinsic and p-type bulk GaAs, highlighting the importance of intraband coherence, hole-optical-phonon interactions, and screening effects, with results aligning with experimental data.
Contribution
It provides a comprehensive microscopic analysis of hole spin relaxation mechanisms, including the effects of intraband coherence and screening, which were not fully considered in previous studies.
Findings
Elliott-Yafet mechanism dominates in intrinsic GaAs at room temperature.
Hole spin relaxation time exhibits a valley at low temperature due to hole-electron scattering.
A peak in spin relaxation time versus hole density is predicted in p-type GaAs at low temperature.
Abstract
We investigate hole spin relaxation in intrinsic and -type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D'yakonov-Perel' and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on…
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