Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors

TL;DR

This paper demonstrates the fabrication of single electron transistors using in-plane grown carbon nanotubes, showing Coulomb blockade effects and high on/off ratios, advancing quantum electronic device development.

Contribution

It introduces a novel in-plane growth method for carbon nanotube SETs, enabling scalable, complex device geometries for quantum electronics.

Findings

Large on/off ratios up to 10^5 achieved.

Observation of conductance oscillations in Coulomb blockade regime.

Successful removal of metallic nanotubes and hysteresis for improved device performance.

Abstract

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 10^5. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices.