Fluctuator model of memory dip in hopping insulators

TL;DR

This paper presents a fluctuator model explaining the memory dip phenomenon in hopping insulators, highlighting how electric field confinement influences non-equilibrium conductance and matches observed temperature and field dependencies.

Contribution

The study introduces a fluctuator-based theoretical model that quantitatively describes the memory dip in hopping insulators under electric field confinement.

Findings

Memory dip exhibits universal temperature and field dependencies.

Electric field confinement causes nearly thermally activated conductance.

Model aligns with experimental observations of non-equilibrium conductance response.

Abstract

We show that the non-equilibrium dynamic in two-dimensional electron glasses close to metal-dielectric transition is dramatically sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, i. e. memory dip in a field dependence of conductance. Theory accounts qualitatively and quantitatively for the universal temperature and field dependencies of memory dip.