ZnO:Co Diluted Magnetic Semiconductor or Hybrid Nanostructure for Spintronics?

TL;DR

This study investigates the magnetic and electrical properties of Co-doped ZnO thin films, revealing paramagnetism with antiferromagnetic interactions and the role of defects, contributing to understanding ZnO-based spintronic materials.

Contribution

It provides detailed insights into the magnetic behavior and defect influence in Co-doped ZnO, clarifying its potential for spintronic applications.

Findings

Co substitutes Zn in ZnO and is in the 2+ oxidation state.

Doped samples are mainly paramagnetic.

Negative Curie-Weiss temperatures indicate antiferromagnetic interactions.

Abstract

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie-Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.