Chip-scale nanofabrication of single spins and spin arrays in diamond

TL;DR

This paper presents a scalable nanofabrication method for creating single nitrogen vacancy (NV) centers in diamond with sub-100 nm precision, enabling advanced quantum device development.

Contribution

The authors develop a high-throughput technique for nanofabricating NV centers in diamond using broad-beam nitrogen implantation through lithography apertures.

Findings

Achieved sub-100 nm NV center placement precision

Depth profiling confirms controlled nitrogen implantation

NV centers exhibit coherence suitable for quantum applications

Abstract

We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.