Theoretical study of current density for InN and GaN-based Gunn diode operating in transit-time mode

TL;DR

This paper provides a theoretical analysis of InN and GaN-based Gunn diodes, detailing their frequency response, current density, and domain dynamics, highlighting InN's potential to operate at 224 GHz with high current density.

Contribution

First theoretical study comparing InN and GaN Gunn diodes, analyzing domain dynamics, frequency response, and current density for different active lengths.

Findings

InN-based Gunn diodes can operate at 224 GHz.

InN diode current density reaches 691 kA/cm² at 300 K.

Results align with existing GaN diode reports.

Abstract

We are the first to report the frequency response and corresponding current density of a wurtzite phase Indium Nitride (InN)-based vertical configuration Gunn diode at 1 \mu m active length. Domain growths dynamics with respect to space and time, variation of domain velocity and the field outside the vicinity of the domain with respect to domain field have also been studied using the presented mathematical equations. It has been found that, InN-based Gunn diodes are capable to operate around 224 GHz with 691 kA/cm2 current density at 300 K. For comparison purpose, all these characteristics have been evaluated for Gunn diodes of different active lengths based on wurtzite phase Gallium Nitride (GaN). Simulated results are consistent with the other reports on GaN-based Gunn diode.