A Local Mott Transition in NiO Resistance Random Access Memory

TL;DR

This paper investigates the local Mott transition in NiO RRAM using the Hubbard model, emphasizing the importance of Wannier functions and effective U variations, and explains the unipolar switching behavior through quantum mechanics.

Contribution

It provides a detailed analysis of the Mott transition in NiO RRAM, highlighting the role of Wannier functions and effective U, and demonstrates the transition as a local phenomenon affecting device characteristics.

Findings

The Hubbard U should not be replaced by atomic s-functions on the metallic side.

The transition can be understood via the Brinkman-Rice picture.

Unipolar switching in NiO RRAM is explained by quantum mechanics as a local Mott transition.

Abstract

The physics of the Mott transition in the anodic region of NiO Resistance Random Access Memory (RRAM) is discussed from the Hubbard model. The Hubbard approximation is examined in details and it is shown that the Wannier functions in the definition of Hubbard U should not be replaced by atomic s-functions when it comes to the metallic side of the transition. The corresponding effective Hubbard U is subject to variations, which may also be understood by introducing an effective permittivity of the solid as an ansatz. Furthermore, the transition could be demonstrated in the Brinkman-Rice picture. Finally, the anodic characteristics of such transition show that it is a local Mott transition. Therefore, the unipolar switching NiO RRAM can still have asymmetric I-V curves when a capping layer is inserted, which is explained qualitatively by quantum mechanics.