Proposal of a spin torque majority gate logic

TL;DR

This paper proposes a novel spin torque majority gate device that uses spin transfer torque for switching, demonstrated through micromagnetic simulations, and is compatible with existing CMOS technology.

Contribution

It introduces a new spin-based logic device functioning as a majority gate, utilizing existing materials and compatible with CMOS, validated by simulations.

Findings

Device operates as a majority gate using spin transfer torque.

Simulation confirms logical functionality and switching behavior.

Device design reuses spin torque RAM materials and structures.

Abstract

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology.