Electron spin relaxation in organic semiconductors probed through muSR

TL;DR

This paper demonstrates the use of muon spin spectroscopy, specifically the avoided level crossing technique, as a sensitive method to measure electron spin relaxation rates in organic semiconductors across different temperatures.

Contribution

It introduces the avoided level crossing technique as a novel application for probing electron spin relaxation in organic semiconductors.

Findings

Electron spin relaxation rate increases with temperature from 0.02 MHz at 3 K to 0.33 MHz at 300 K.

Avoided level crossing data effectively quantify local electron spin dynamics.

Muon spin spectroscopy provides a sensitive local probe for spin relaxation in organic materials.

Abstract

Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on TMS-pentacene at different temperatures are presented, and they are analysed to extract the electron spin relaxation rate, that is shown to increase on increasing the temperature from 0.02 MHz to 0.33 MHz at 3 K and 300 K respectively.