Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

TL;DR

This study investigates the magneto-transport properties of thin film VO2 across its metal-insulator transition, revealing a significant increase in carrier density and electron dominance, with minimal mobility change and small positive magnetoresistance.

Contribution

It provides detailed measurements of Hall carrier density and mobility in VO2 across the MIT, highlighting the dominant role of electrons and the minimal change in mobility.

Findings

Hall carrier density increases by 4 orders of magnitude at MIT

Electrons are the major carriers on both sides of the transition

Small positive magnetoresistance observed in the semiconducting phase

Abstract

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.