Consistent Asymptotic Expansion of Mott's Solution for Oxide Growth
Matthew R. Sears, Wayne M. Saslow

TL;DR
This paper develops a systematic asymptotic expansion for oxide growth, extending Mott's theory to include non-monovalent carriers and bulk charge, predicting a logarithmic correction to the oxide thickness.
Contribution
It introduces a consistent asymptotic expansion of Mott's solution, incorporating non-monovalent carriers and bulk charge effects during oxide growth.
Findings
Derives a second-order correction with a logarithmic term in oxide thickness
Extends Mott's theory to include bulk charge and non-monovalent carriers
Predicts measurable logarithmic correction to oxide growth law
Abstract
Many relatively thick metal oxide films grow according to what is called the parabolic law L = 2At + . . . . Mott explained this for monovalent carriers by assuming that monovalent ions and electrons are the bulk charge carriers, and that their number fluxes vary as t^{-1/2} at sufficiently long t. In this theory no charge is present in the bulk, and surface charges were not discussed. However, it can be analyzed in terms of a discharging capacitor, with the oxide surfaces as the plates. The theory is inconsistent because the field decreases, corresponding to discharge, but there is no net current to cause discharge. The present work, which also includes non-monovalent carriers, systematically extends the theory and obtains the discharge current. Because the Planck-Nernst equations are nonlinear (although Gauss's Law and the continuity equations are linear) this leads to a systematic…
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Taxonomy
TopicsElectrochemical Analysis and Applications · Electronic and Structural Properties of Oxides · Theoretical and Computational Physics
