Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

TL;DR

This study demonstrates how low temperature annealing can effectively tune the magnetic anisotropy in (Ga,Mn)(As,P) layers by increasing carrier density, aligning experimental results with theoretical models.

Contribution

It provides new insights into controlling magnetic anisotropy in (Ga,Mn)(As,P) through thermal annealing, highlighting carrier density as a key factor.

Findings

Magnetic anisotropy switches from in-plane to perpendicular after annealing.

Carrier density increases significantly due to annealing.

The experimental results agree with theoretical predictions.

Abstract

We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase of the carrier density, as a result of annealing, is found to be the primary reason for the change in magnetic anisotropy, in qualitative agreement with theoretical predictions.