Direct-write, focused ion beam-deposited,7 K superconducting C-Ga-O nanowire

TL;DR

This paper reports the fabrication of C-Ga-O nanowires via focused ion beam deposition, demonstrating superconductivity at 7 K with a high critical field, advancing direct-write superconducting nanostructures.

Contribution

It introduces a novel method to create superconducting C-Ga-O nanowires with higher Tc than previous direct-write nanowires, expanding applications.

Findings

Superconductivity observed below 7 K in C-Ga-O nanowires.

Zero temperature critical field estimated at 8.8 T.

Tc is approximately 40% higher than other direct-write nanowires.

Abstract

We have fabricated C-Ga-O nanowires by gallium focused ion beam-induced deposition from the carbon-based precursor phenanthrene. The electrical conductivity of the nanowires is weakly temperature dependent below 300 K, and indicates a transition to a superconducting state below Tc = 7 K. We have measured the temperature dependence of the upper critical field Hc2(T), and estimate a zero temperature critical field of 8.8 T. The Tc of this material is approximately 40% higher than that of any other direct write nanowire, such as those based on C-W-Ga, expanding the possibility of fabricating direct-write nanostructures that superconduct above liquid helium temperatures