Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

TL;DR

This study uses scanning Raman spectroscopy to analyze graphene antidot lattices, revealing systematic p-type doping evidenced by shifts in phonon modes and their correlations.

Contribution

It provides the first systematic Raman spectroscopic analysis of graphene antidot lattices, demonstrating doping effects induced by nanostructuring.

Findings

Systematic G band stiffening and narrowing in antidot lattices

Linear correlation between 2D and G mode energies

Evidence for p-type doping in nanostructured graphene

Abstract

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene.