Large low-frequency resistance noise in chemical vapor deposited graphene

TL;DR

This study investigates resistance noise in CVD-grown single-layer graphene on Si/SiO2, revealing unusually large noise levels with weak dependence on gate voltage and temperature, differing from exfoliated graphene.

Contribution

It provides the first detailed characterization of low-frequency resistance noise in CVD graphene, highlighting its large magnitude and unique dependence on external parameters.

Findings

Resistance noise is significantly larger in CVD graphene compared to exfoliated graphene.

Noise magnitude shows weak variation with gate voltage and temperature.

Hooge parameter reaches values as high as 0.1 to 0.5.

Abstract

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1 - 0.5$. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.