Tunneling Conductance of The Graphene SNS Junction with a Single Localized Defect

TL;DR

This paper investigates how a single localized defect affects the tunneling conductance and Andreev bound states in a graphene SNS junction, revealing that the minimum conductance remains unchanged regardless of defect position.

Contribution

It provides a theoretical analysis of the impact of a localized defect on tunneling conductance in graphene SNS junctions using the Dirac-Bogoliubov-de Gennes framework.

Findings

Localized defect modifies Andreev bound state spectrum

Minimum tunneling conductance remains unaffected by defect location

Results are relevant for understanding defect effects in graphene-based superconducting devices

Abstract

We study the electronic transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction by use of the Dirac-Bogoliubov-de Gennes equation. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit. We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk. The minimum tunneling conductance remains the same and this result doesn't depend on the actual location of the imperfection.