Instability, Intermixing and Electronic Structure at the Epitaxial LaAlO3/SrTiO3(001) Heterojunction
S.A. Chambers, M.H. Engelhard, V. Shutthanandan, Z. Zhu, T.C. Droubay,, L. Qiao, P.V. Sushko, T. Feng, H. D. Lee, T. Gustafsson, E. Garfunkel, A.B., Shah, J.-M. Zuo, Q.M. Ramasse

TL;DR
This study combines experimental and theoretical methods to investigate the stability, intermixing, and electronic properties of LaAlO3/SrTiO3(001) heterojunctions, revealing extensive intermixing and its impact on conductivity mechanisms.
Contribution
It demonstrates that extensive atomic intermixing is thermodynamically favored at the interface and is essential to explain the electronic properties, challenging the traditional electronic reconstruction model.
Findings
Strong tendency toward intermixing at the interface.
Valence band offset near zero with no measurable electric field.
Intermixing explains conductivity through La diffusion and doping.
Abstract
The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to elemental concentrations and spatial separations to investigate interfaces grown using on-axis pulsed laser deposition. We also employ computational modeling based on the density function theory as well as classical force fields to explore the energetic stability of a wide variety of intermixed atomic configurations relative to the idealized, atomically abrupt model. Statistical analysis of the calculated energies for the various configurations is used to elucidate the relative thermodynamic stability of intermixed and abrupt configurations. We find that on both experimental and theoretical fronts, the tendency toward intermixing is very strong. We have…
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