Weak antilocalization effect in LPE-grown p-Hg0.8Cd0.2Te thin film and the evidence of Te-precipitation

TL;DR

This paper reports the observation of weak antilocalization in a p-type Hg0.8Cd0.2Te thin film, attributing it to Te-precipitation, supported by compositional analysis and data fitting.

Contribution

It provides evidence linking weak antilocalization effects to Te-precipitation in HgCdTe thin films, a novel insight into their electronic properties.

Findings

Weak antilocalization observed in the thin film

Te-precipitation identified as the cause

Data fits well with Te crystal model

Abstract

The weak antilocalization effect is observed in a p-type Hg0.8Cd0.2Te thin film with thickness ~10 micrometers. Based on the analysis of composition, carrier species and excellent fitting of data with a model concerning weak antilocalization effect in Te crystal, the most plausible explanation is that the observed weak antilocalization effect is caused by Te-precipitation.