Compact silicon double and triple dots realized with only two gates

TL;DR

This paper demonstrates the creation of silicon double and triple quantum dots using only two gates, optimizing device simplicity while maintaining control over their electronic properties.

Contribution

The work introduces a method to realize silicon double and triple dots with only two gates, using silicon nitride spacers and gate voltages for precise control.

Findings

Double dots created with two gates and silicon nitride spacers.

Triple dots achieved via gate voltages or local doping.

Quantitative fitting of the triple dot stability diagram.

Abstract

We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.