Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface

TL;DR

This study investigates how Ge islands grow and change shape on a vicinal Si(1 1 10) surface, revealing a transition from ripple to dome structures through experimental microscopy and theoretical modeling.

Contribution

It provides a detailed microscopic and theoretical analysis of the morphological transition of Ge islands on a vicinal surface, highlighting differences from flat substrates.

Findings

Ge islands evolve from ripples to domes during growth.

Shape evolution involves agglomeration and coalescence of ripples.

Theoretical models accurately explain experimental observations.

Abstract

We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By combining first principle calculations with continuum elasticity theory, we provide an accurate explanation of our experimental observations.