Disorder-induced magnetooscillations in bilayer graphene at high bias

TL;DR

This paper predicts novel magnetooscillations in biased bilayer graphene with a Mexican-hat energy spectrum, which are weakly affected by temperature and disorder, and their period scales with the square of the bias voltage.

Contribution

It introduces a new type of magnetooscillations arising from disorder-induced scattering in bilayer graphene with a Mexican-hat spectrum, distinct from conventional oscillations.

Findings

Additional magnetooscillations are insensitive to temperature.

Oscillations are unaffected by long-range disorder.

Oscillation period scales with the square of bias voltage.

Abstract

Energy spectrum of biased bilayer graphene near the bottom has a "Mexican-hat"-like shape. For the Fermi level within the Mexican hat we predict that, apart from conventional magnetooscillations which vanish with temperature, there are additional magnetooscillations which are weakly sensitive to temperature. These oscillations are also insensitive to a long-range disorder. Their period in magnetic field scales with bias, V, as V^2. The origin of these oscillations is the disorder-induced scattering between electron-like and hole-like Fermi-surfaces, specific for Mexican hat.