Two-dimensional surface charge transport in topological insulators
Dimitrie Culcer, E. H. Hwang, Tudor D. Stanescu, and S. Das Sarma

TL;DR
This paper develops a quantum theory for charge transport on the surface of three-dimensional topological insulators, analyzing impurity effects, scattering mechanisms, and how these influence conductivity and relaxation times.
Contribution
It provides a comprehensive quantum Liouville equation-based model for surface state conductivity, including impurity scattering and polarization effects, with detailed analysis of different scattering contributions.
Findings
Conductivity is inversely proportional to impurity density.
Different scattering mechanisms lead to distinct carrier density dependencies.
The ratio of relaxation times reveals dominant scattering angles.
Abstract
We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the electron doping is such that the Fermi energy and transport scattering time satisfy , but sufficiently low that lies below the bottom of the conduction band. Our theory is based on the spin density matrix and takes the quantum Liouville equation as its starting point. The scattering term is determined accurately to linear order in the impurity density. We consider scattering by charged impurities and short-range scatterers such as surface roughness. We calculate also the polarization function in topological insulators, emphasizing the differences from graphene. We find that the main contribution to the conductivity is , where is the…
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