Nanostructures in p-GaAs with improved tunability

TL;DR

This paper introduces a nano-fabrication method for creating highly tunable p-GaAs devices using combined in-plane and top-gate electrostatic control, demonstrated through quantum point contact testing.

Contribution

The paper presents a novel fabrication technique enabling enhanced tunability of p-GaAs heterostructures with integrated in-plane and top-gate electrodes.

Findings

High tunability achieved in p-GaAs devices

Quantum point contacts show expected conductance behavior

Electrostatic gating effectively controls device properties

Abstract

A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.