Weak field magnetoresistance of narrow-gap semiconductors InSb

TL;DR

This study investigates the weak field magnetoresistance of InSb thin films, analyzing anisotropy, localization effects, and extracting key physical parameters through model fitting.

Contribution

It systematically examines the anisotropic weak localization effects in InSb thin films and fits experimental data to models to extract phase coherence and spin-orbit scattering times.

Findings

Weak localization effect confirmed in InSb thin films.

In-plane magnetic field suppresses weak localization.

Excellent fit between experimental data and models.

Abstract

The magnetoresistance of InSb has been intensively investigated. The experiments we perform here focus on weak field magnetoresistance of InSb thin film. We investigate the magnetoresistance of InSb films in perpendicular, tilted as well as parallel magnetic field. Our results verify the previous observations concerning weak localization effect in InSb thin film. Moreover, we systematically study the anisotropy of magnetoresistance of InSb. We find that the existence of in-plane field can effectively suppress the weak localization effect of InSb film. We fit the experimental data with two types of models, the match between data and model is excellent. From the fitting procedure, we get information about phase coherence time, spin-orbit scattering time. The information about Zeeman effect and sample roughness are also extracted from the fitting procedure.