The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

TL;DR

This study demonstrates that hole concentration is crucial for carrier-mediated ferromagnetism in Mn-doped Ge, with the highest reported hole concentration correlating with magnetic properties.

Contribution

It shows that controlling hole concentration through annealing is key to inducing ferromagnetism in Mn-doped Ge, providing new insights into magnetic semiconductor engineering.

Findings

Hole concentration ranges from 10^18 to 2.1x10^20 cm^-3.

Higher hole concentrations enhance ferromagnetic behavior.

The highest hole concentration reported is the highest so far in Mn-doped Ge.

Abstract

In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.