Electron properties of fluorinated single-layer graphene transistors

TL;DR

This paper investigates how fluorination affects the electronic properties of single-layer graphene transistors, revealing increased resistance and a mobility gap that alters electron transport mechanisms.

Contribution

It demonstrates that fluorination induces a mobility gap in graphene, significantly changing its electronic transport properties compared to pristine graphene.

Findings

Fluorinated graphene exhibits large, temperature-dependent resistance.

A mobility gap is created by fluorination, affecting electron transport.

Transport occurs via localized electron states within the gap.

Abstract

We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states.