Anisotropic conductivity of doped graphene due to short-range non-symmetric scattering

TL;DR

This paper investigates how short-range nonsymmetric defects cause anisotropic conductivity in doped graphene, showing that longitudinal and transverse conductivities differ and depend on sample orientation and doping level.

Contribution

It introduces a model for anisotropic conductivity in doped graphene considering short-range nonsymmetric defect scattering, with explicit calculations of conductivity tensor components.

Findings

Longitudinal and transverse conductivities differ due to defect scattering.

Conductivity anisotropy depends on sample orientation and doping level.

The model predicts controllable anisotropic electrical responses in doped graphene.

Abstract

The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetric defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e. doping level), are presented.