Evidence of gate-tunable topological excitations in two-dimensional electron systems

TL;DR

This study provides evidence of gate-tunable topological excitations in strongly interacting two-dimensional electron systems, revealing a BKT-like transition and insights into the ground state in disordered, strongly correlated materials.

Contribution

It demonstrates the controlled proliferation of topological defects in 2DESs and links their behavior to a BKT-like transition, advancing understanding of topological excitations in quantum materials.

Findings

Electrical conductivity follows BKT-like transition

Weakening of temperature dependence at low temperatures

Insight into the ground state with disorder and interactions

Abstract

Topological defects are ubiquitous from solid state physics to cosmology, where they drive phase transitions by proliferating as domain walls, monopoles or vortices. As quantum excitations, they often display fractional charge and anyonic statistics, making them relevant to topologically protected quantum computation, but realizing a controlled physical resource for topological excitations has been difficult. Here we report evidence of topological excitations during the localization transition in strongly interacting two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures. We find the electrical conductivity at low electron densities to follow a Berezinskii-Kosterlitz Thouless (BKT)-like order-disorder transition implying a gate-tunable proliferation of charged topological defects. At low temperatures, a weakening in the temperature dependence of conductivity was observed, and linked to the zero point fluctuations and delocalization of the defects. Our experiments also cast crucial insight on the nature of the ground state in strongly interacting 2DESs in presence of disorder.