Numerical approach for retention characteristics of double floating-gate memories

TL;DR

This paper presents a numerical study comparing double and single floating-gate memory structures, highlighting the DFG's longer retention time and analyzing the interference effects and charging energy.

Contribution

It introduces an analytical model for charging energy in DFG structures considering interference effects, advancing understanding of their retention characteristics.

Findings

DFG has longer retention time than single FG

DFG exhibits smaller threshold voltage shift

Analytical charging energy model includes interference effects

Abstract

We report on a numerical investigation in which memory characteristics of double floating-gate (DFG) structure were compared to those of the conventional single floating-gate structure, including an interference effect between two cells. We found that the advantage of the DFG structure is its longer retention time and the disadvantage is its smaller threshold voltage shift. We also provide an analytical form of charging energy including the interference effect.