Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon

TL;DR

This paper introduces a hybrid optical-electrical scheme leveraging the quantum Hall effect and phosphorus impurity hyperfine states in silicon to enable robust nuclear spin qubit measurement, promising for quantum memory applications.

Contribution

It presents a novel hybrid measurement system combining quantum Hall effects with hyperfine state detection for silicon-based nuclear spin qubits.

Findings

Enables nuclear spin measurement with environmental robustness.

Utilizes quantum Hall effect for stable qubit readout.

Suitable for long-coherence quantum memory in silicon.

Abstract

We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spins in isotopically purified 28Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.