Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

TL;DR

This study demonstrates current-driven magnetic domain wall motion in (Ga,Mn)(As,P) across a wide temperature range with low critical currents, highlighting its potential for understanding spin-transfer torque in systems with strong spin-orbit interaction.

Contribution

It reports the first observation of domain wall motion in (Ga,Mn)(As,P) at various temperatures with low critical currents, enabled by reduced domain wall pinning.

Findings

Critical currents are around 10^5 A/cm^2.

Domain wall motion occurs well below the ferromagnetic transition temperature.

The critical current aligns with theoretical predictions.

Abstract

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction.