Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

TL;DR

This paper reports the fabrication of oxide diodes utilizing the metal-insulator transition at LaAlO3-SrTiO3 interfaces, achieving high breakdown voltages and significant capacitance changes, with robust operation at elevated temperatures.

Contribution

It introduces a novel diode design leveraging the metal-insulator transition to enhance breakdown voltage and capacitance tunability.

Findings

Breakdown voltages up to 200 V at room temperature.

Capacitance change factor of 150 with applied voltage.

Robust operation up to 270°C.

Abstract

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.