On defect-induced magnetism and bang opening in graphene
A. M. Panich
TL;DR
This paper explores how hydrogenation and fluorination induce magnetism and band gaps in graphene, providing insights into experimental mechanisms for modifying its electronic properties.
Contribution
It introduces specific mechanisms of defect-induced magnetism and band opening in graphene due to chemical modifications like hydrogenation and fluorination.
Findings
Identification of magnetism mechanisms in chemically modified graphene
Explanation of band gap opening due to defects
Potential experimental approaches for observing these effects
Abstract
We discuss several mechanisms of magnetism and band opening in graphene produced by its hydrogenation and fluorination that can be examined experimentally.
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Taxonomy
TopicsGraphene research and applications · Parallel Computing and Optimization Techniques · Magnetic Field Sensors Techniques