High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures

TL;DR

This paper explores how a hybrid metal-semiconductor structure can induce high-temperature ferromagnetism and spin polarization in charge carriers, maintaining their high mobility, which is promising for spintronic applications.

Contribution

It demonstrates the significant amplification of ferromagnetism in a hybrid heterostructure due to indirect interactions, enabling high-temperature spin polarization of high-mobility carriers.

Findings

High-temperature ferromagnetism is induced in the quantum well.

Charge carriers exhibit preserved high mobility.

Ferromagnetism is amplified by the ferromagnetic metal through indirect interactions.

Abstract

We consider magnetic properties of the planar structure consisting of a ferromagnetic metal, diluted magnetic semiconductor and the quantum well (by the example of the hybrid heterostructure Fe--Ga(Mn)As--InGaAs). In the framework of the mean-field theory, there is the significant amplification of the ferromagnetism induced by the ferromagnetic metal (Fe) in the system of magnetic impurities (Mn) due to their indirect interaction via the conductivity channel in the quantum well. As a result, the high-temperature ferromagnetism arises leading to the spin polarization of charge carriers (holes) localized in the quantum well and preserving their high mobility.