Optimizing Transistor Performance of Percolating Carbon Nanotube Networks

TL;DR

This study combines experiments and simulations to optimize transistor performance in carbon nanotube networks by balancing density and metallic content, achieving high mobility and on/off ratios.

Contribution

It introduces a combined experimental and Monte Carlo simulation approach to analyze and optimize CNT network transistor performance based on density and channel length.

Findings

Achieved field-effect mobility up to 50 cm^2/Vs.

Obtained on/off ratio greater than 10^3.

Identified optimal CNT densities and channel lengths for device performance.

Abstract

In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density p in the range 0.04 - 1.29 CNT/{\mu}m^2 in the on- and off-states. Optimized devices with field-effect mobility up to 50 cm^2/Vs at on/off ratio > 10^3 were obtained at W = 50 {\mu}m, L > 70 {\mu}m for p = 0.54 - 0.81 CNTs/{\mu}m^2.