Terahertz Response of Field-Effect Transistors in Saturation Regime

TL;DR

This paper investigates the terahertz response of InGaAs/GaAs HEMTs in the saturation regime, demonstrating high responsivity and developing a phenomenological theory applicable across different operating regimes.

Contribution

It presents the first broadband THz response measurements of HEMTs in saturation and introduces a phenomenological model for their response.

Findings

THz responsivity reaches up to 170 V/W

Response increases linearly with drain bias

Model applicable in both ohmic and saturation regimes

Abstract

We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the saturation regimes.