Giant inelastic tunneling in epitaxial graphene mediated by localized states

TL;DR

This study reveals that localized states in epitaxial graphene on SiC significantly enhance inelastic tunneling, with up to 50% of the tunneling current influenced by these states, as observed through atomic-scale microscopy.

Contribution

It provides the first detailed atomic-scale analysis of how localized states affect inelastic tunneling in epitaxial graphene on SiC.

Findings

Localized states strongly influence graphene's electronic structure.

Giant inelastic tunneling enhancement observed at localized states.

Up to 50% of tunneling current is inelastic at these states.

Abstract

Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have an essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.