Thermal rectification effects of multiple semiconductor quantum dot junctions
David M T Kuo

TL;DR
This paper theoretically investigates how multiple semiconductor quantum dots can exhibit thermal rectification effects, influenced by tunneling rates, size fluctuations, and QD distribution, using advanced Green's function techniques.
Contribution
It introduces a theoretical model for thermal rectification in multiple QD junctions considering nonlinear thermoelectric effects and quantum tunneling.
Findings
Thermal rectification observed in multiple QD systems.
Rectification efficiency affected by tunneling rate and size fluctuation.
Quantum dot distribution impacts thermoelectric behavior.
Abstract
Based on the multiple energy level Anderson model, this study theoretically examines the thermoelectric effects of semiconductor quantum dots (QDs) in the nonlinear response regime. The charge and heat currents in the sequential tunneling process are calculated by using the Keldysh Green's function technique. Results show that the thermal rectification effect can be observed in a multiple QD junction system, whereas the tunneling rate, size fluctuation, and location distribution of QD significantly influence the rectification efficiency.
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